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搜索耗时0.8383秒,为你在为你在102,267,441篇论文里面共找到 17 篇相符的论文内容
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[期刊论文] 作者：Wu Jie-Jun,Wang Kun,Yu Tong-Jun,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2015
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,Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN f
[期刊论文] 作者：Zhao Lu-Bing,Yu Tong-Jun,Wu Jie-Jun,Yang Zhi-Jian,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2010
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[期刊论文] 作者：Zhong Can-Tao,Yu Tong-Jun,Yan Jian,Chen Zhi-Zhong,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2013
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,Microstructure Study on Heterostructures of AlInGaN/GaN/Al2O3 by Using Rutherford Backscattering/Ch
[期刊论文] 作者：WANG Huan,YAO Shu-De,PAN Yao-Bo,YU Tong-Jun,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2006
A quateary AlInGaN layer is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with a thick (＞ 1 μm) GaN intermediate layer....
[期刊论文] 作者：Tao Ren-Chun,Yu Tong-Jun,Jia Chuan-Yu,Chen Zhi-Zhong,Qin Zhi-Xin,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2009
Strain effects on the polarized optical properties of c-plane and m-plane InxGa1-xN were discussed for different In compositions (x = 0, 0.05, 0.10, 0.15) by an...
[期刊论文] 作者：RUAN Jun,YU Tong-Jun,JIA Chuan-Yu,TAO Ren-Chun,WANG Zhan-Guo,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2009
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,Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with M
[期刊论文] 作者：Li Zhong-Hui,Yu Tong-Jun,Yang Zhi-Jian,Feng Yu-Chun,Zhang Guo-Yi,Guo Bao-Ping,Niu Han-Ben,
来源：中国物理（英文版） 年份：2005
InGaN/GaN multi-quantum well structure with Mg-doped p-type GaN was grown by low-pressure metalorganic vapour phase epitaxy. After rapid-thermal-annealing at 70...
[期刊论文] 作者：YU Tong-Jun,KANG Xiang-Ning,PAN Yao-Bo,QIN Zhi-Xin,CHEN Zhi-Zhong,YANG Zhi-Jian,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2007
InGaN/GaN MQWs,InGaN/AlGaN MQWs and InGaN/AlInGaN MQWs are grown on (0001) sapphire substrates by MOCVD. Membrane samples are fabricated by laser lift-off techn...
[期刊论文] 作者：JIANG Xian-Zhe,YANG Xue-Lin,JI Cheng,XING Hai-Ying,YANG Zhi-Jian,WANG Cun-Da,YU Tong-Jun,
来源：中国物理快报（英文版） 年份：2014
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[期刊论文] 作者：Fang Hao,Long Hao,Sang Li-Wen,Qi Sheng-Li,Xiong Chang,Yu Tong-Jun,Yang Zhi-Jian,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2011
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[期刊论文] 作者：PAN Yao-Bo,YANG Zhi-Jian,LU Yu,LU Min,HU Cheng-Yu,YU Tong-Jun,HU Xiao-Dong,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2004
The Mg-delta-doped GaN structure has been grown by Iow-pressure metalorganic chemical vapour deposition.The Hall-effect measurements reveal that the electrical...
[期刊论文] 作者：Du Yan-Hao,Wu Jie-Jun,Luo Wei-Ke,John Goldsmith,Han Tong,Tao Yue-Bin,Yang Zhi-Jian,Yu Tong-Jun,Zhang,
来源：中国物理B（英文版） 年份：2011
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[期刊论文] 作者：MU Sen,YU Tong-Jun,HUANG Liu-Bing,JIA Chuan-Yu,PAN Yao-Bo,YANG Zhi-Jian,CHEN Zhi-Zhong,QIN Zhi-Xin,ZHANG,
来源：中国物理快报（英文版） 年份：2007
Electrical characteristics of Ino.05Gao.95N/AJo.07Gao.93N and Ino.05Gao.95N/GaN multiple quantum well (MQW) ultraviolet light-emitting diodes (UV-LEDs) at 400 n...
,GaN-Based Thin Film Vertical Structure Light Emitting Diodes Fabricated by a Modified Laser Lift-of
[期刊论文] 作者：SUN Yong-Jian,Yu Tong-Jun,JIA Chuan-Yu,CHEN Zhi-Zhong,TIAN Peng-Fei,KANG Xiang-Ning,LIAN Gui-Jun,HUANG,
来源：中国物理快报(英文版) 年份：2010
GaN-based thin film vertical structure light-emitting diodes(VS-LEDs)were fabricated by a modified YAG laser lift-off(LLO)process and transferred to Cu substrat...
,Shock-Assisted Superficial Hexagonal-to-Cubic Phase Transition in GaN/Sapphire Interface Induced by
[期刊论文] 作者：CHEN Wei-Hua,HU Xiao-Dong,SHAN Xu-Dong,KANG Xiang-Ning,ZHOU Xu-Rong,ZHANG Xiao-Min,YU Tong-Jun,YANG Zhi-Jian,
来源：中国物理快报(英文版) 年份：2009
Ultra-violet (KrF excimer laser, λ =248 nm) laser lift-off (LLO) techniques have been operated to the GaN/sapphire structure to separate GaN from the sapphire...
,Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitti
[期刊论文] 作者：LI Zhong-Hui(李忠辉),YANG Zhi-Jian(杨志坚),QIN Zhi-Xin(秦志新),TONG Yu-Zhen(童玉珍),YU Tong-Jun(于彤军),LU Shu(陆曙),YANG,
来源：中国物理快报（英文版） 年份：2003
The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW)structure were grown by low-pressure metalorganic vapour phas...
,Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of In
[期刊论文] 作者：LI Zhong-Hui(李忠辉),YU Tong-Jun(于彤军),YANG Zhi-Jian(杨志坚),TONG Yu-Zhen(童玉珍),ZHANG Guo-Yi(张国义),FENG Yu-Chun,
来源：中国物理快报（英文版） 年份：2004
An InGaN multiple-quantum-well (MQW) violet-light-emitting diode (LED) is grown by low-pressure metalorganic chemical vapour deposition. It is found that photol...
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