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[期刊论文] 作者:WENG Qian-Chun,AN Zheng-Hua,XIONG Da-Yuan,ZHU Zi-Qiang, 来源:中国物理快报(英文版) 年份:2015
Excited states of InAs quantum dots (QDs) can be energetically coupled with the confined level of GaAs quantum wells (QWs) in a thin-barrier resonant tunneling...
[期刊论文] 作者:XIONG Da-Yuan,LI Ning,LI Zhi-Feng,ZHEN Hong-Lou,LU Wei, 来源:中国物理快报(英文版) 年份:2007
Detection wavelength is one of the key performance indices of infrared photodetectors. We study the character of detection wavelength of the strained InxGa1-xAs...
[期刊论文] 作者:XIONG Da-Yuan,LI Ning,XU Wen-Lan,YIN Fei,LU Wei, 来源:中国物理快报(英文版) 年份:2007
We perform a theoretical study on a low dark current InGaAs/GaAs very-long-wavelength (>12 μm) quantum well infrared photodetector (VLW-QWIP), based on a double...
[期刊论文] 作者:ZHEN Hong-Lou,LI Ning,XIONG Da-Yuan,ZHOU Xu-Chang,LU Wei,LIU Hui-Chun, 来源:中国物理快报(英文版) 年份:2005
We report the fabrication of an upconversion infrared detector, i.e. a quantum well infrared photodetector integrated with a light-emitting diode (named as QWIP...
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