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Trapped Electron and Hole Distribution Mismatch Induced Reliability Degradation of SONOS Type Memory
[期刊论文] 作者：SHI Guangjian,PAN Liyang,SUN L,
来源：清华大学学报（英文版） 年份：2004
The reliability of silicon-oxide-nitride-oxide-silicon (SONOS) type memories was analyzed using the charge pumping method and Ⅰ-Ⅴ tests at different temperatu...
Trapped Electron and Hole Distribution Mismatch Induced Reliability Degradation of SONOS Type Memory
[期刊论文] 作者：SHI Guangjian,PAN Liyang,SUN L,
来源：黑龙江科技学院学报 年份：2009
为探究吕家坨井田地质构造格局,根据钻孔勘探资料,采用分形理论和趋势面分析方法,研究了井田7...
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