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,Microstructure Study on Heterostructures of AlInGaN/GaN/Al2O3 by Using Rutherford Backscattering/Ch
[期刊论文] 作者：WANG Huan,YAO Shu-De,PAN Yao-Bo,YU Tong-Jun,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2006
A quateary AlInGaN layer is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with a thick (＞ 1 μm) GaN intermediate layer....
,Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorga
[期刊论文] 作者：LU Yu,YANG Zhi-Jian,PAN Yao-Bo,XU Ke,HU Xiao-Dong,ZHANG Bei,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2006
The effect of Al doping in the GaN layer of InGaN/GaN multiple quantum-well light emitting diodes (LEDs) grown by metalorganic chemical vapour deposition is inv...
[期刊论文] 作者：YU Tong-Jun,KANG Xiang-Ning,PAN Yao-Bo,QIN Zhi-Xin,CHEN Zhi-Zhong,YANG Zhi-Jian,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2007
InGaN/GaN MQWs,InGaN/AlGaN MQWs and InGaN/AlInGaN MQWs are grown on (0001) sapphire substrates by MOCVD. Membrane samples are fabricated by laser lift-off techn...
[期刊论文] 作者：PAN Yao-Bo,YANG Zhi-Jian,LU Yu,LU Min,HU Cheng-Yu,YU Tong-Jun,HU Xiao-Dong,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2004
The Mg-delta-doped GaN structure has been grown by Iow-pressure metalorganic chemical vapour deposition.The Hall-effect measurements reveal that the electrical...
[期刊论文] 作者：ZHAO Lu-Bing,WU Jie-Jun,XU Ke,BAO Sui,YANG Zhi-Jian,PAN Yao-Bo,HU Xiao-Dong,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2008
GaN-based laser diodes (LDs) with 399 nm wavelength are grown on sapphire substrates by metal organic chemical vapour deposition (MOCVD).Electroluminescence spe...
[期刊论文] 作者：MU Sen,YU Tong-Jun,HUANG Liu-Bing,JIA Chuan-Yu,PAN Yao-Bo,YANG Zhi-Jian,CHEN Zhi-Zhong,QIN Zhi-Xin,ZHANG,
来源：中国物理快报（英文版） 年份：2007
Electrical characteristics of Ino.05Gao.95N/AJo.07Gao.93N and Ino.05Gao.95N/GaN multiple quantum well (MQW) ultraviolet light-emitting diodes (UV-LEDs) at 400 n...
,Mosaic Structure Evolution in GaN Films with Annealing Time Grown by Metalorganic Chemical Vapour D
[期刊论文] 作者：CHEN Zhi-Tao,XU Ke,GUO Li-Ping,YANG Zhi-Jian,PAN Yao-Bo,SU Yue-Yong,ZHANG Han,SHEN Bo,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2006
We investigate mosaic structure evolution of GaN films annealed for a long time at 800 ℃ grown on sapphire substrates by metalorganic chemical vapour depositio...
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