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,Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescenc
[期刊论文] 作者：He Xiao-Guang,Zhao De-Gang,Jiang De-Sheng,Zhu Jian-Jun,Chen Ping,Liu Zong-Shun,Le Ling-Cong,
来源：中国物理B（英文版） 年份：2015
...
,Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au c
[期刊论文] 作者：Li Xiao-Jing,Zhao De-Gang,Jiang De-Sheng,Chen Ping,Zhu Jian-Jun,Liu Zong-Shun,Le Ling-Cong,
来源：中国物理B（英文版） 年份：2015
...
[期刊论文] 作者：Liu Wei,Zhao De-Gang,Jiang De-Sheng,Chen Ping,Liu Zong-Shun,Zhu Jian-Jun,Li Xiang,
来源：中国物理B（英文版） 年份：2015
...
,Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple q
[期刊论文] 作者：Yang Jing,Zhao De-Gang,Jiang De-Sheng,Liu Zong-Shun,Chen Ping,Li Liang,Wu Liang-Liang,
来源：中国物理B（英文版） 年份：2014
...
,Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifet
[期刊论文] 作者：Yang Jing,Zhao De-Gang,Jiang De-Sheng,Liu Zong-Shun,Chen Ping,Li Liang,Wu Liang-Liang,
来源：中国物理B（英文版） 年份：2013
...
,Influences of polarization effect and p-region doping concentration on the photocurrent response of
[期刊论文] 作者：Li Xiao-Jing,Zhao De-Gang,Jiang De-Sheng,Liu Zong-Shun,Chen Ping,Wu Liang-Liang,Li Liang,
来源：中国物理B（英文版） 年份：2014
...
[期刊论文] 作者：Li Liang,Zhao De-Gang,Jiang De-Sheng,Liu Zong-Shun,Chen Ping,Wu Liang-Liang,Le Ling-Cong,
来源：中国物理B（英文版） 年份：2013
...
[期刊论文] 作者：CHEN Ping,ZHAO De-Gang,FENG Mei-Xin,JIANG De-Sheng,LIU Zong-Shun,ZHANG Li-Qun,LI De-Yao,
来源：中国物理快报（英文版） 年份：2013
An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated.The laser diode structure is grown on a GaN substrate by m...
[期刊论文] 作者：ZHAO De-Gang,JIANG De-Sheng,LIU Zong-Shun,ZHU Jian-Jun,WANG Hui,ZHANG Shu-Ming,YANG Hui,
来源：中国物理快报（英文版） 年份：2009
The gain mechanism in GaN Sehottky barrier ultraviolet photodetectors is investigated by focused light beam.When the incident light illuminates the central regi...
,Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Mul
[期刊论文] 作者：ZHAO De-Gang,JIANG De-Sheng,ZHU Jian-Jun,LIU Zong-Shun,ZHANG Shu-Ming,WANG Yu-Tian,YANG Hui,
来源：中国物理快报（英文版） 年份：2008
Effects of interface roughness and dislocation density on the electroluminescence (EL) intensity of In GaN multiplem quantum wells (MQWs) are investigated. It i...
[期刊论文] 作者：LI Liang,ZHAO De-Gang,JIANG De-Sheng,LIU Zong-Shun,CHEN Ping,WU Liang-Liang,LE Ling-Cong,
来源：中国物理快报（英文版） 年份：2013
InGaN is a commonly used compound semiconductor.Its unique properties such as high absorption coefficient,high mobility,and tunable energy gap indicate its pote...
[期刊论文] 作者：Zhang Li-Qun,Zhang Shu-Ming,Jiang De-Sheng,Wang Hui,Zhu Jian-Jun,Zhao De-Gang,Liu Zong-Shun,Yang Hui,
来源：中国物理B（英文版） 年份：2009
...
[期刊论文] 作者：Lu Guo-Jun,Zhu Jian-Jun,Jiang De-Sheng,Wang Yu-Tian,Zhao De-Gang,Liu Zong-Shun,Zhang Shu-Ming,Yang Hui,
来源：中国物理B（英文版） 年份：2010
...
[期刊论文] 作者：WANG Hui,ZHU Ji-Hong,JIANG De-Sheng,ZHU Jian-Jun,ZHAO De-Gang,LIU Zong-Shun,ZHANG Shu-Ming,YANG Hui,
来源：中国物理快报（英文版） 年份：2009
Mg-doped p-InGaN layers with In composition of about 10% are grown by metalorganic chemical vapor deposition (MOCVD).The effect of the annealing temperature on...
,Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of ligh
[期刊论文] 作者：Wang Liang-Ji,Zhang Shu-Ming,Zhu Ji-Hong,Zhu Jian-Jun,Zhao De-Gang,Liu Zong-Shun,Jiang De-Sheng,Wang,
来源：中国物理B（英文版） 年份：2010
...
,Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffrac
[期刊论文] 作者：Guo Xi,Wang Hui,Jiang De-Sheng,Wang Yu-Tian,Zhao De-Gang,Zhu Jian-Jun,Liu Zong-Shun,Zhang Shu-Ming,Yang,
来源：中国物理B（英文版） 年份：2010
...
[期刊论文] 作者：JI Lian,ZHANG Shu-Ming,JIANG De-Sheng,LIU Zong-Shun,ZHANG Li-Qun,ZHU Jian-Jun,ZHAO De-Gang,DUAN Li-Hong,
来源：中国物理快报（英文版） 年份：2010
...
[期刊论文] 作者：Ji Lian,Jiang De-Sheng,Zhang Shu-Ming,Liu Zong-Shun,Zeng Chang,Zhao De-Gang,Zhu Jian-Jun,Wang Hui,Duan,
来源：中国物理B（英文版） 年份：2010
...
[期刊论文] 作者：Wu Yu-Xin,Zhu Jian-Jun,Chen Gui-Feng,Zhang Shu-Ming,Jiang De-Sheng,Liu Zong-Shun,Zhao De-Gang,Wang Hui,
来源：中国物理B（英文版） 年份：2010
...
,The effect of single A1GaN interlayer on the structural properties of GaN epilayersgrown on Si(111)
[期刊论文] 作者：Wu Yu-xin,Zhu Jian-Jun,Zhao De-Gang,Liu zong-shun,Jiang De-sheng,Zhang Shu-Ming,Wang Yu-Tian,Wang Hui,
来源：中国物理B（英文版） 年份：2009
High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AIN buffer...
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