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[会议论文] 作者：Heterogeneous Integration,
来源：SEMICON China 2007(半导体系列论坛) 年份：2007
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[期刊论文] 作者：吴立枢,赵岩,沈宏昌,张有涛,陈堂胜,,
来源：Chinese Physics B 年份：2016
In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration...
[期刊论文] 作者：Shuyu Bao,Yue Wang,Khaw Lina,Li Zhang,Bing Wang,Wardhana Aji Sasangka,Kenneth Eng Kian Lee,Soo Jin Chua,Jurgen Michel,Eugene Fitzgerald,Chuan Seng Tan,Kwang Hong Lee,
来源：半导体学报（英文版） 年份：2021
The heterogeneous integration of Ⅲ-Ⅴ devices with Si-CMOS on a common Si platform has shown great promise...
[期刊论文] 作者：Shuyu Bao,Yue Wang,Khaw Lina,L,
来源：半导体学报:英文版 年份：2021
The heterogeneous integration of III-V devices with Si-CMOS on a common Si platform has shown great promise...
[会议论文] 作者：Masayoshi Esashi,
来源：第七届微米纳米技术创新与产业化国际论坛(The 7th International Workshop on Innova 年份：2013
Advanced MEMS have been developed by heterogeneous integration.PZT MEMS switches,AIN FBAR,LN (Lithium Nitride) SAW devices are fabricated on on CMOS LSI by...
[期刊论文] 作者：NeeteshSingh,HamiduM.Mbonde,HenryC.Frankis,ErichIppen,JonathanD.B.Bradley,FranzX.K?rtner,
来源：PhotonicsResearch 年份：2020
lacking a monolithic platform for optical sources and nonlinear functionalities prompting heterogeneous integration...
[期刊论文] 作者：朱厚彬,李青云,韩黄璞,李真宇,张秀全,张洪湖,胡卉,
来源：ChineseOpticsLetters 年份：2021
The heterogeneous integration of silicon thin film and lithium niobate (LN) thin film combines both the...
[期刊论文] 作者：Houbin Zhu,Qingyun Li,Huangpu Han,Zhenyu Li,Xiuquan Zhang,Honghu Zhang,Hui Hu,
来源：中国光学快报（英文版） 年份：2021
The heterogeneous integration of silicon thin film and lithium niobate[LN]thin film combines both the...
A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration
[期刊论文] 作者：ShuyuBao,YueWang,KhawLina,LiZhang,BingWang,WardhanaAjiSasangka,KennethEngKianLee,SooJinChua,JurgenMichel,EugeneFitzgerald,ChuanSengTan,KwangHongLee,
来源：JournalofSemiconductors 年份：2021
The heterogeneous integration of III–V devices with Si-CMOS on a common Si platform has shown great promise...
[期刊论文] 作者：Yuhao Zhang,Kevin J.Chen,
来源：中国科学：物理学 力学 天文学（英文版） 年份：2021
Power electronics,processing over 50％of world's electric energy,enables very efficient electric energy conversion for a wide range of applications such as electr...
[期刊论文] 作者：,
来源：电子工业专用设备 年份：2020
微机电系统(MEMS)、纳米技术和半导体市场晶圆键合与光刻设备领先供应商EV集团(EVG)日前宣布成立异质集成能力中心(Heterogeneous Integration Competence Center...
[期刊论文] 作者：Li-Shu Wu,Yan Zhao,Hong-Chang Shen,You-Tao Zhang,Tang-Sheng Chen,
来源：中国物理B（英文版） 年份：2016
...
[期刊论文] 作者：Yan-Fu Wang,BO Wang,Rui-Ze Feng,Zhi-Hang Tong,Tong Liu,Peng Ding,Yong-Bo Su,Jing-Tao Zhou,Feng Yang,Wu-Chang Ding,Zhi Jin,
来源：中国物理B（英文版） 年份：2022
Heterogeneous integrated InP high electron mobility transistors (HEMTs) on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene (BCB) bonding technology.The channel of the new devic......
Heterogeneous integration of Lattice-mismatched Materials on Si for 1.55μm Optical Communications Ap
[会议论文] 作者：,
来源：第六届全国分子束外延学术会议 年份：2001
...
Heterogeneous integration of Lattice-mismatched Materials on Si for 1.55μm Optical Communications Ap
[会议论文] 作者：,
来源：第六届全国分子束外延学术会议 年份：2001
...
[期刊论文] 作者：Yue Hao,Huaqiang Wu,Yuchao Yan,
来源：半导体学报:英文版 年份：2021
In the past few decades,the Moore’s Law has been the revolutionary force for our integrated circuit(IC)industry.However,the tremendous challenges faced in cont...
[期刊论文] 作者：Yue Hao,Huaqiang Wu,Yuchao Yang,Qi Liu,Xiao Gong,Genquan Han,Ming Li,
来源：半导体学报（英文版） 年份：2021
In the past few decades,the Moore's Law has been the re-volutionary force for our integrated circuit(IC)industry.However,the tremendous challenges faced in cont...
Heterogeneous Integration of GaSb-based epitaxy on silicon-on-insulator:towards mid-infrared photoni
[会议论文] 作者：N.Hattasan,D.Van Thourhout,G.Roelkens,L.Cerutti,J.B.Rodriguez,E.Tournié,
来源：第十届中红外光电子材料与器件国际会议 年份：2010
...
Heterogeneous Integration of GaSb-based epitaxy on silicon-on-insulator:towards mid-infrared photoni
[会议论文] 作者：N.Hattasan,L.Cerutti,J.B.Rodriguez,E.Tournié,D.Van Thourhout,G.Roelkens,
来源：第十届中红外光电子材料与器件国际会议 年份：2010
...
Heterogeneous integration of InP-based type-Ⅱ active devices on silicon for 2μm wavelength range on-
[会议论文] 作者：Ruijun Wang,Stephan Sprengel,Muhammad Muneeb,Gerhard Boehm,Aditya Malik,Roel Baets,Markus-Christian Amann,Gunther Roelkens,
来源：The 13th International Conference on Mid-Infrared Optoelectr 年份：2016
...
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