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对现代的双极型晶体管而言,载流子在基极和集电极的空间电荷区(CB SCR)传输延迟可比基极渡越时间,甚至要大于后者。为了更精确地表征了SiGe HBT的射频噪声性能,对van Vliet模型做了扩展,使其包含基极集电极空间电荷区的延迟效应。用2个与噪声相关的延迟时间对transport模型进行了扩展,使得在没有非准静态Y参数的情况下仍然可以对基极和集电极电流噪声进行精确建模。最后,在JC=12.2 mA/μm2,AE=0.12×18μm2条件下,分别对2种模型的基极和集电极噪声电流谱及其归一化相关系数做图并与计算得出的解析值相比较,验证了模型的有效性。
For modern bipolar transistors, the charge carrier transport delay at the base and collector space charge regions (CB SCRs) can be even greater than the base transit time. In order to characterize the RF noise performance of SiGe HBT more accurately, the van Vliet model was extended to include the delay effect of the base collector space charge region. The transport model is extended with two noise-dependent delay times so that base and collector current noise can still be accurately modeled without non-quasi-static Y-parameters. Finally, under the condition of JC = 12.2 mA / μm 2 and AE = 0.12 × 18 μm 2, the current and collector noise current spectra of the two models and their normalized correlation coefficients were plotted and compared with the calculated analytical values The validity of the model is verified by comparison.