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为了实现大功率输出,应用无杂质空位诱导量子阱混合(IFVD)方法制备带有非吸收窗口结构的915 nm半导体激光器单管。通过实验确定促进和抑制量子阱混合的Si O2和Si3N4薄膜的厚度分别为300和500 nm,退火条件为800℃,90 s。最终制备出的带有非吸收窗口的激光器,与普通激光器的阈值电流和斜率效率几乎一样。但普通激光器在电流为10 A时发生灾变性光学损伤(COD)并失效,而带有非吸收窗口的激光器在电流达到13 A时仍然可以正常工作,相比普通激光器其最大输出功率增加了15%。每种器件各20个在20℃,电流为9 A时进行直流老化试验,普通激光器在老化时间达到100 h时全部失效,而带非吸收窗口器件在老化200 h时仅有两个失效,这表明非吸收窗口结构显著提高了器件的抗COD能力。
In order to achieve high power output, a 915 nm diode laser tube with a non-absorbing window structure was fabricated by using impurity-free vacancy-induced quantum well mixing (IFVD) method. The thicknesses of Si O2 and Si3N4 thin films that promote and suppress the quantum well mixing were determined by experiments to be 300 and 500 nm, respectively. The annealing conditions were 800 ℃ and 90 s. The resulting lasers with non-absorbing windows are nearly identical in efficiency to the threshold current and slope of normal lasers. Ordinary lasers, however, suffer catastrophic optical damage (COD) at a current of 10 A and fail with lasers with non-absorbing windows that still operate at currents up to 13 A, with a 15% increase in maximum output power compared to conventional lasers %. 20 samples each of each device were tested for DC burn-in at 20 ° C and a current of 9 A, while lasers failed completely when the aging time reached 100 h, whereas devices with non-absorbing windows had only two failures at 200 h aging It shows that non-absorption window structure significantly improves the anti-COD ability of the device.