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由于台阶的出现,应变SiGe p型金属氧化物半导体场效应管(pMOSFET)的栅电容特性与体Si器件的相比呈现出很大的不同,且受沟道掺杂的影响严重.本文在研究应变SiGe pMOSFET器件的工作机理及其栅电容C-V特性中台阶形成机理的基础上,通过求解器件不同工作状态下的电荷分布,建立了应变SiGe pMOSFET栅电容模型,探讨了沟道掺杂浓度对台阶的影响.与实验数据的对比结果表明,所建立模型能准确反映应变SiGe pMOSFET器件的栅电容特性,验证了模型的正确性.该理论为Si基应变金属氧化物半导体(MOS)器件的设计制造提供了重要的指导作用,并已成功应用于Si基应变器件模型参数提取软件中,为Si基应变MOS的仿真奠定了理论基础.
Due to the presence of steps, the gate capacitance characteristics of strained SiGe pMOSFETs are quite different from that of bulk Si devices and are seriously affected by the channel doping.In this paper, Based on the formation mechanism of the step in the strained SiGe pMOSFET device and the gate capacitance CV characteristic, the gate capacitance model of strained SiGe pMOSFET is established by solving the charge distribution in different working states of the device. The effects of the channel doping concentration on the step .The results of comparison with experimental data show that the model can accurately reflect the gate capacitance of strained SiGe pMOSFET device and verify the correctness of the model.The design and fabrication of Si-based strained metal oxide semiconductor (MOS) device Provides an important guiding role and has been successfully applied to Si-based strain device model parameter extraction software, which has laid a theoretical foundation for the simulation of Si-based strain MOS.