【摘 要】
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In this study,we present an organic field-effect transistor floating-gate memory using polysilicon (poly-Si) as a charge trapping layer.The memory device is fab
【机 构】
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Institute of Microelectronics, Lanzhou University, Lanzhou 730000, China“,”School of Electronic and
论文部分内容阅读
In this study,we present an organic field-effect transistor floating-gate memory using polysilicon (poly-Si) as a charge trapping layer.The memory device is fabricated on a N+-Si/SiO2 substrate.Poly-Si,polymethylmethacrylate,and pentacene are used as a floating-gate layer,tunneling layer,and active layer,respectively.The device shows bidirectional storage characteristics under the action of programming/erasing (P/E) operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate.The carrier mobility and switching current ratio (Ion/Ioff ratio) of the device with a tunneling layer thickness of 85 nm are 0.01 cm2.V-1 ·S-1 and 102,respectively.A large memory window of 9.28 V can be obtained under a P/E voltage of ±60 V.
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