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为了改善GaAs(110)与自身氧化物界面由于高表面态密度而引起的费米能级钉扎(pinning)问题,提出采用射频磁控溅射技术在GaAs(110)衬底上沉积一定厚度ZnO薄膜作为钝化层,并利用光致发光(PL)光谱和X射线光电子能谱(XPS)等方法对ZnO薄膜的光学特性及钝化性能进行表征。实验结果表明,经ZnO薄膜钝化后的GaAs样品,其本征PL峰强度提高112.5%,杂质峰强度下降82.4%。XPS光谱分析表明,Ga和As原子的比值从1.47降低到0.94,ZnO钝化层能够抑制Ga和As的氧化物形成。因此,在GaAs表面沉积ZnO薄膜是一种可行的GaAs表面钝化方法。
In order to improve the Fermi level pinning caused by the high surface-state density of GaAs (110) and its own oxide interface, we propose to deposit a certain thickness of ZnO on GaAs (110) substrate by RF magnetron sputtering Thin film as a passivation layer. The optical properties and passivation properties of the ZnO thin films were characterized by photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). The experimental results show that the intrinsic PL peak intensity increases by 112.5% and the impurity peak intensity decreases by 82.4% after passivation of ZnO thin films. XPS spectral analysis showed that the ratio of Ga and As atoms decreased from 1.47 to 0.94, and the ZnO passivation layer inhibited the formation of Ga and As oxides. Therefore, the deposition of ZnO thin films on the surface of GaAs is a feasible GaAs surface passivation method.