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本文采用ＳＥＭ、ＥＤＡＸ和ＴＥＭ等手段研究了多靶磁控溅射制备的Ｃｕ－ＴｉＮ复合薄膜，并测定了薄膜的电阻率。研究表明：复合薄膜的微结构随ＴｉＮ含量及基片温度发生明显变化，其电阻率在基片温度约为２００℃时取得极小值，约为室温沉积薄膜电阻率的１／４。
In this paper, the Cu-TiN composite films prepared by multi-target magnetron sputtering were investigated by means of SEM, EDAX and TEM. The resistivity of the films was measured. The results show that the microstructure of the composite thin film changes obviously with the content of TiN and the temperature of the substrate. The resistivity of the composite thin film reaches its minimum when the substrate temperature is about 200 ℃, which is about 1/4 of the resistivity of the deposited film at room temperature.