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采用变磁场霍耳测量,在１．５~９０Ｋ的温度范围内,研究了经过快速热退火与未退火掺杂ＭＭ－ＨＥＭＴ材料中二维电子气的输运特性通过对Ｓｈｕｂｎｉｋｏｖ－ｄｅＨａｓｓ(ＳｄＨ)振荡曲线进行快速Ｆｏｕｒｉｅｒ变换分析,获得了该样品沟道中子能带上的电子浓度等信息,并采用迁移率谱(ＭＳ)和多载流子拟合过程法(ＭＦＣ)相结合的方法分析了该样品中子能带电子的浓度和迁移率．该方法与ＳｄＨ测量所获得的结果符合得很好,都证实了在很高的温度下退火将影响样品沟道中电子的浓度和迁移率,对材料性能起着不可低估的作用．
In the temperature range of 1.5 ~ 90K, the transport properties of two-dimensional electron gas in MM-HEMT materials subjected to rapid thermal annealing and non-annealing were investigated by using variable-field Hall measurements. The effects of Shubnikov-deHass (SdH) And the Fourier transform analysis of the oscillation curve was performed. The information of the electron concentration on the neutron energy band of the sample channel was obtained and analyzed by the combination of mobility spectrometry (MS) and multi-carrier fitting process (MFC) The neutron energy concentration and mobility of the sample. This method is in good agreement with the results obtained by SdH measurement. It is confirmed that annealing at very high temperature will affect the electron concentration and mobility in the sample channel, which can not underestimate the material properties.