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针对300 mm正硅酸乙酯(TEOS)镀膜片在化学机械平坦化(CMP)过程中中心去除速率快而边缘去除速率慢的问题,研究了抛光头摆动位置、抛光头不同区域压力和非离子型表面活性剂对TEOS去除速率一致性的影响。实验结果显示,抛光头距抛光盘中心越远,中心去除速率越慢,去除速率一致性越好;增加抛光头边缘压力,加快了边缘去除速率,提高了去除速率一致性;增加非离子表面活性剂添加量,提高了温度分布均匀性,进而改善去除速率一致性。与初始工艺对比,在抛光头摆动位置距抛光盘中心7.2~8.2英寸(1英寸=2.54 cm)、抛光头边缘压力增加20%、添加非离子表面活性剂体积分数1.5%条件下,片内非均匀性(WIWNU)降低了60.9%。
Aiming at the problem of high removal rate and slow edge removal rate of 300 mm TEOS coated films during chemical mechanical planarization (CMP), the effects of polishing head swing position, pressure in different regions of polishing head and non-ionic Effect of Surfactants on TEOS Removal Rate Consistency. The experimental results show that the farther the polishing head is from the center of the polishing disc, the slower the center removal rate is and the better the consistency of the removal rate is. The higher the edge pressure of the polishing head, the faster the edge removal rate and the higher the consistency of the removal rate. The amount of agent added improves the uniformity of temperature distribution and thus improves the consistency of removal rates. In contrast to the initial process, the pressure at the edge of the polishing head increases by 7.2% (1 inch = 2.54 cm) from the center of the polishing head at the swinging position of the polishing head, and the pressure at the edge of the polishing head increases by 20%. When the volume fraction of nonionic surfactant is added at 1.5% The uniformity (WIWNU) is reduced by 60.9%.