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研究了低温下分子束外延生长ＧａＡｓ（ＬＴＧ－ＧａＡｓ）样品的稳态和瞬态发光．从２００℃生长的样品中可测到很弱但清晰可辨的稳态发光峰，峰的能量位置相对于体ＧａＡｓ激子峰有一定蓝移．此外，发现在体ＧａＡｓ上生长ＬＴＧ－ＧａＡｓ薄膜可大大减小体ＧａＡｓ衬底材料中本征发光的衰减时间，但对（ｅ，Ａ°）发光影响不大．用上转换方法对退火和未退火ＬＴＧ－ＧａＡｓ样品瞬态发光进行了测量，获得了关于ＬＴＧ－ＧａＡｓ中复合中心和陷阱中心的信息．
The steady state and transient luminescence of molecular beam epitaxially grown GaAs (LTG-GaAs) samples at low temperature were studied. Steady-state luminescence peak can be detected weakly but sharply from the sample grown at 200 ℃, and the energy position of the peak has a certain blue shift relative to the bulk GaAs exciton peak. In addition, it is found that the growth of LTG-GaAs thin film on bulk GaAs can greatly reduce the decay time of intrinsic luminescence in bulk GaAs substrate, but it has little effect on (e, A °) luminescence. Transient luminescence of annealed and non-annealed LTG-GaAs samples was measured by the upconversion method, and information on the recombination center and trap center in LTG-GaAs was obtained.