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对目前广泛用于制备高Ｔｃ（转变温度）超导薄膜的环形磁控溅射成膜提出了一种新的理论模型，采用泰勒展开计算出了三阶近似的解析结果．通过计算机作出了薄膜生长速率及厚度均匀性随薄膜位置变化关系的三维曲线，得到了生长大面积均匀薄膜、快速生长薄膜的最佳位置，并同使用较广泛的平面磁控溅射的一些计算结果进行了比较．
A new theoretical model is proposed for the ring magnetron sputtering film widely used to prepare high Tc (transition temperature) superconducting thin films. The analytical results of third order approximation are calculated by Taylor expansion. The three-dimensional curve of the film growth rate and thickness uniformity with the change of the film position was made by computer, and the best position for growing a large area uniform film and a rapidly growing film was obtained, and with some calculations using a wider range of planar magnetron sputtering The results were compared.