研究了p+ 栅pMOSFET中的NBTI效应 .通过实验分析了NBTI应力后器件特性及典型参数的退化 ,研究了氮化栅氧中氮对NBTI效应的作用 ,并给出了栅氧中的氮对NBTI效应影响的可能机制 ,即栅氧中氮形成的Si—N键不易被分解 ,但栅氧中的氮提供了H+ 的陷阱中心 ,导致NBTI效应中氧化层正固定电荷的增加 ,其总体效果表现为氮对NBTI效应退化影响的增加 The NBTI effect in p + gate pMOSFET is studied.The device characteristics and the degradation of typical parameters after NBTI stress are analyzed. The effect of nitrogen on the NBTI effect in nitride gate oxide is studied. The effects of nitrogen in gate oxide on NBTI The possible mechanism of the effect is that the Si-N bond formed by nitrogen in the gate oxide is not easily decomposed, but the nitrogen in the gate oxide provides the trap center of H +, resulting in an increase of the positive fixed charge of the oxide layer in the NBTI effect. The overall effect Is the effect of nitrogen on the degradation of NBTI effect