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介绍了一种 Si Ge/Si分子束外延异质结双极晶体管 ( HBT)的研制。该器件采用 3μm工艺制作 ,测量得其电流放大系数β为 50 ,截止效率 f T 为 5.1 GHz,表明器件的直流特性和交流特性良好。器件的单片成品率在 90 %以上。
A SiGe / Si molecular beam epitaxial heterojunction bipolar transistor (HBT) is introduced. The device is fabricated in a 3μm process and measured with a current amplification factor β of 50 and a cut-off efficiency f T of 5.1 GHz, indicating good DC and AC characteristics of the device. The device’s monolithic yield of more than 90%.