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本文介绍了SOS(兰宝石上生长硅单晶)传感器,多晶硅阻传感器以及SOI(绝缘衬底上生长硅)压阻传感器三种可以应用在高温的半导体力敏传感器的结构和制造工艺,着重介绍并分析比较了国内外目前生长SOI材科的五种方法以及用它制造压阻式传感器的几个特殊问题。
This paper introduces the structure and manufacturing process of SOS (sapphire single crystal growth) sensors, polysilicon resistance sensors and SOI (silicon on insulator substrate) piezoresistive sensors that can be applied to high temperature semiconductor force sensors. The five methods of growing SOI materials at home and abroad are analyzed and compared, and some special problems of piezoresistive sensors are also analyzed.