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Predominantly (100)-oriented Ca0.4Sr0.6Bi4Ti4O15 (C0.4S0.6BTi) thin films were prepared on Pt (111)/Ti/SiO2/Si substrates by a sol-gel method at annealing temperatures ranging from 650 to 850 ℃.The growth mode of the predominantly (100)-oriented C0.4S0.6 BTi thin films fabricated by the sequential layer annealing was discussed based on the structure evolution with the annealing temperature.The remnant polarization and coercive field of the C0.4S0.6 BTi film annealed at 800 ℃ are 16.1 μC/cm 2 and 85 kV/cm,respectively.No evident fatigue can be observed after 10 9 switching cycles.
Predominantly (100) -oriented Ca0.4Sr0.6Bi4Ti4O15 (C0.4S0.6BTi) thin films were prepared on Pt (111) / Ti / SiO2 / Si substrates by a sol-gel method at temperatures ranging from 650 to 850 ° C. The growth mode of the predominantly (100) -oriented C0.4S0.6 BTi thin films fabricated by the sequential layer annealing was discussed based on the structure evolution with the annealing temperature. The remnant polarization and coercive field of the C0.4S0.6 BTi film annealed at 800 ℃ are 16.1 μC / cm 2 and 85 kV / cm, respectively.No evident fatigue can be observed after 10 9 switching cycles.