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20030401 化学气相沉积Ti-Si-C-N新型涂层——Kao D H.TheSolid Film,2002,419(11):11(英文) 探讨了常压下TiCl_4,SiCl_4,C_2H_2,NH_3和Ar作反应气体,用化学气相沉积方法制备的Ti-Si-C-N四元复合涂层。为了降低沉积温度,改变了过去常用的工艺条件,以NH_3取代N_2。在不同的沉积温度和SiCl_4流量的工况下,研究了四元涂层的沉积过程。当涂层厚度为4.5～20.0μm时,生长速率较快(9.0～40.0μm/h),且与工艺参数有关。值得注意的是:在各种温度下SiCl_4的流量会影响涂层的组织、成分和生长动力学。涂层硬度为11.5～20.3GPa时,且与沉积温度和SiCl_4供量有关。
A novel coating of chemical vapor deposition Ti-Si-CN - Kao D H. The Solid Film, 2002,419 (11): 11 (English) The reaction gas of TiCl 4, SiCl 4, C 2 H 2, NH 3 and Ar under atmospheric pressure was investigated. Ti-Si-CN quaternary composite coating prepared by chemical vapor deposition method. In order to reduce the deposition temperature, changing the process conditions used in the past to replace N_2 with NH_3. The deposition process of quaternary coatings was studied under different deposition temperatures and SiCl 4 flow rates. When the coating thickness is 4.5 ~ 20.0μm, the growth rate is faster (9.0 ~ 40.0μm / h), and the process parameters. It is worth noting that the flow of SiCl 4 at various temperatures will affect the texture, composition and growth kinetics of the coating. Coating hardness of 11.5 ~ 20.3GPa, and with the deposition temperature and the amount of SiCl_4 supply.