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基于Ga As衬底采用全息光刻和湿法刻蚀技术制备周期孔阵图形。得出全息光刻双曝光最优曝光时间为60 s。采用H3PO4∶H202∶H2O=1∶1∶10配比的刻蚀液,得出最佳刻蚀时间为30 s。扫描电子显微镜(SEM)和原子力显微镜(AFM)测试图片显示,孔阵周期为528 nm,刻蚀深度为124 nm,具有完美的表面形貌及良好均匀性和周期性。
Cyclic aperture array patterns were prepared by holographic and wet etching techniques based on GaAs substrate. Obtained holographic lithography double exposure optimal exposure time of 60 s. Using H3PO4:H202:H2O = 1: 1: 10 ratio of the etching solution, the best etching time was 30 s. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) test images show that the perforation cycle is 528 nm and the etching depth is 124 nm, with perfect surface morphology and good uniformity and periodicity.