本文导出了有关液封法拉制砷化镓单晶的分配—分凝方程,并讨论了提高GaAS单晶的纵向均匀性的有效途径。一、前目目口目前由于砷化稼及有关化合物的发光、激光,微波器件迅速发展,对GaAs衬底材料质量提出了越 In this paper, the distribution - fractionation equation of gallium arsenide single crystal pulled by liquid - sealed method is deduced and an effective way to improve the longitudinal uniformity of GaAS single crystal is discussed. First, the former head of the mouth Currently, due to the light-emitting arsenic compounds and related compounds, the rapid development of laser and microwave devices, the quality of GaAs substrate materials made the more