论文部分内容阅读
由于铜线具有较高的热导率、卓越的电学性能以及较低的成本,被普遍认为将逐渐代替传统的金线而在IC封装的键合工艺中得到广泛的应用。铜线键合工艺中Cu/Al界面金属间化合物(IMC)与金线键合的Au/Al IMC生长情况有很大差别,本文针对球焊键合中键合点的Cu/Al界面,将金属间化合物生长理论与分析手段相结合,研究了Cu/Al界面IMC的生长行为及其微结构。文中采用SEM测试方法,观察了IMC的形貌特点,测量并得到了IMC厚度平方正比于热处理时间的关系,计算得到了生长速率和活化能数值,并采用TEM,EDS等测试手段,进一步研究了IMC界面的微结构、成分分布及其金相结构。
Due to its high thermal conductivity, excellent electrical properties and low cost, copper wire is generally considered to be widely used in IC package bonding process instead of traditional gold wire. The Cu / Al interface intermetallic compound (IMC) in copper wire bonding process is different from the gold wire bonding Au / Al IMC growth condition. In this paper, the Cu / Al interface of bonding point in ball bonding is studied. The growth mechanism and microstructure of IMC at Cu / Al interface were studied by combining the theory of compound growth and analytical methods. In this paper, the morphology of IMC was observed by SEM test. The relationship between the square of IMC thickness and the heat treatment time was obtained. The growth rate and activation energy were calculated. TEM, EDS and other testing methods were used to further study Microstructure, composition and microstructure of IMC interface.