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南京固体器件研究所采用In/PCI_3/H_2系统气相外延生长的n~+-n-n~+InP材料,采用适用于InP的Au-Ge-Ni合金欧姆接触、化学腐蚀减薄衬底和光照刻蚀台面等工艺,制作了台式镀金热沉结构的毫米波段连续波体效应振荡二极管(见照片)。该器件有源区的掺杂浓度为7.35×10~(15)cm~(-3),厚度为2.85μm;台面直径约70μm,台面高度为15μm;管壳系无边缘同轴封装。用V波段同轴波导腔测试微波性能,得到的初
Nanjing Institute of Solid State Devices n ~ + -nn ~ + InP grown by In / PCI_3 / H_2 system by vapor phase epitaxy, ohmic contact Au-Ge-Ni alloy suitable for InP, chemical etching thinning substrate and photolithography Mesa and other technology, produced a desktop gilded heat sink structure of the millimeter wave band-effect wave diode (see photo). The active region of the device has a doping concentration of 7.35 × 10 ~ (15) cm -3 and a thickness of 2.85μm. The diameter of the mesa is about 70μm and the mesa height is 15μm. The V-band coaxial waveguide cavity was used to test the microwave performance