对滲气阴极真空电弧法制备的四面体非晶炭(ta-C)膜实施氧等离子体刻蚀,消除其表面石墨层后,发现:原沉积膜中ta-C石墨表层的消除会影响其受激电子的石墨建序化。应用发射电子能耗谱,表面增强拉曼光谱和表面敏化X光吸收光谱等测量方法,测定了其表层的消除(程度)。样品的氧等离子体刻蚀阻迟了受激电子的石墨化作用,可能归因于多相成核过程中石墨晶核的缺失之故. Oxygen plasma etching of the tetrahedron amorphous carbon (ta-C) film prepared by the air-through cathode vacuum arc method was used to eliminate the surface graphite layer. It was found that the elimination of the ta-C graphite surface layer in the original deposited film affected its Electron-excited graphite is ordered. The emission (energy) spectrum, surface enhanced Raman spectroscopy and surface-sensitized X-ray absorption spectroscopy were used to measure the surface layer elimination. Oxygen plasma etching of the sample delayed the graphitization of excited electrons, which may be attributed to the absence of graphite nuclei during the multi-phase nucleation.