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一、前言近些年来随着卫星通讯、雷达、辐射计、射电天文学、遥感技术的飞速发展,对于低噪声接收的要求越来越迫切。目前的低噪声接收器件除行波量子放大器、参量放大器、行波管放大器以外,微波晶体管放大器也占据着重要的地位。特别是 GaAs 场效应晶体管放大器得到了飞速发展。因为它不仅具备频域宽,灵敏度高,动态范围大,抗干扰性强、稳定可靠性好,而且制造简单,价格便宜,体积小、重量轻等许多优点。下面简述其性能及目前的发展状况。
I. Introduction In recent years, with the rapid development of satellite communications, radar, radiometer, radio astronomy and remote sensing technology, the requirements for low noise receiving are becoming more and more urgent. The current low-noise receiver devices in addition to traveling wave quantum amplifiers, parametric amplifiers, traveling wave tube amplifiers, microwave transistor amplifiers also occupy an important position. In particular, GaAs FET amplifier has been rapid development. Because it not only has the advantages of wide frequency domain, high sensitivity, large dynamic range, strong anti-interference, good stability and reliability, simple manufacturing, low price, small size and light weight. The following brief description of its performance and the current state of development.