论文部分内容阅读
对激光照射下光伏型锑化铟光电探测器的响应特性进行了研究,得到了强激光辐照下温度波动(低温和常温温度波动)对探测器响应特性的影响。利用材料内部的光生电动势分析模型,通过数值模拟,给出了理论上的激光辐照下主要参数对探测器输出电压的影响。结果表明:输出电压随着温度的上升而降低,饱和电压也随着温度的上升而降低。特别是低温与常温下的响应特性有所不同,随着入射光功率的增大,低温下随温度变化的输出电压变化量减小,常温下随温度变化的输出电压变化量增大。
The response characteristics of photovoltaic InSb photodetectors under laser irradiation were studied. The effects of temperature fluctuations (low and normal temperature fluctuations) on the detector response characteristics were obtained under intense laser irradiation. Based on the model of the photogenerated electromotive force in the material, the influence of the main parameters on the output voltage of the detector under the theoretical laser irradiation is given by numerical simulation. The results show that the output voltage decreases with the increase of temperature and the saturation voltage decreases with the rise of temperature. In particular, the response characteristics of low temperature and normal temperature are different. With the increase of incident light power, the change of output voltage with temperature changes at low temperature decreases, and the change of output voltage with temperature changes at room temperature increases.