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对GaAs赝配高电子迁移率晶体管(PHEMT)在栅凹槽光刻和栅凹槽腐蚀过程中光刻窗口内经常出现的一些沾污颗粒进行了分析。设计了一系列实验来分析残留在芯片上的颗粒度参数,采用4英寸(1英寸=2.54 cm)圆片模拟实际的栅凹槽清洗工艺过程,利用颗粒度测试仪分别测试了4英寸圆片表面不同粒径的沾污颗粒数在喷淋和兆声清洗两种条件下的变化情况。比较两种清洗结果,兆声清洗方法可以有效去除栅凹槽颗粒沾污。在实际流片过程中,采用兆声清洗方法大幅降低了源漏间沟道漏电数值,同时芯片的直流参数成品率由之前的75%提高到了93%。
Some of the contaminated particles that often appear in photolithographic windows in GaAs pseudomorphic high electron mobility transistors (PHEMT) during gate recess lithography and gate recess corrosion are analyzed. A series of experiments were designed to analyze the particle size parameters remaining on the chip. A 4 inch (1 inch = 2.54 cm) wafer was used to simulate the actual gate recess cleaning process. A 4 inch wafer Changes in the number of particles with different particle sizes on the spray and megasonic cleaning. Comparing the two cleaning results, Megasound cleaning method can effectively remove the gate groove particle contamination. In the actual process of film, the megasonic cleaning method drastically reduces the channel leakage between the source and drain values, while the chip DC parameter yield increased from the previous 75% to 93%.