论文部分内容阅读
介绍了将离子枪组合于卢瑟福背散射分析靶室中构成Ｓｐｕｔｔｅｒｉｎｇ／ＲＢＳ原位分析实验装置，用低能离子溅射剥层与高能离子背散射组合对薄膜样品进行成分和深埋层分析方法．给出了对样品分析的三个例子．对Ａｕ／Ｓｉ 样品的分析着重讨论了Ａｕ 在Ａｒ＋ 溅射剥层时的溅射速率；对Ｓｉ／ＧｅＳｉ／Ｓｉ 和ＷＳｉｘ／ＳｉＯ２／Ｓｉ 样品的深埋层分析，提高了样品分析的深度分辨率．讨论了这一Ｓｐｕｔｔｅｒｉｎｇ／ＲＢＳ组合分析方法的优缺点和在薄膜材料研究中可能的应用
The combination of ion gun and Rutherford backscattering target chamber was introduced to form the Sputtering / RBS in-situ analysis device. The composition of the thin film samples was analyzed by using low energy ion sputtering and high energy ion backscattering. . Three examples of sample analysis are given. The analysis of Au / Si samples focused on the sputter rate of Au during Ar + sputtering delamination; the deep buried layer analysis of Si / Ge Si / Si and WSix / SiO2 / Si samples increased the depth of sample analysis Resolution. The advantages and disadvantages of this Sputtering / RBS combinatorial analysis method are discussed and its possible applications in thin film materials