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本文提出了测量二次电子发射系数的一种新方法-三枪连续脉冲法。这种方法可以用来测定各种金属、介质、半导体、晶体等材料的全能量范围二次电子、发射系数δ。介绍了三枪连续脉冲的原理和实验装置。并给出了用三枪连续脉冲法测量DKDP电光晶体的全能量范围二次电子发射系数。结果表明DKDP晶体的二次电子发射系数与一般介质的二次电子发射系数差不多。还给出了以镍为基底和以DKDP晶体为基底的发射介质膜〔ZnS〕~5+〔MgF_2〕~4的二次电子发射系数。结果表明,基底不同,反射介质膜的电子发射系数也不同。对相同基底的反射介质膜〔ZnS〕~5+〔MgF_2〕~4的二次电子发射系数测量表明它既不同于ZnS也不同于MgF_2的二次电子发射系数。
In this paper, a new method of measuring the secondary electron emission coefficient - three shots continuous pulse method is proposed. This method can be used to determine all kinds of metals, media, semiconductors, crystals and other materials all-energy range of secondary electrons, the emission coefficient δ. The principle and experimental device of three-shot continuous pulse are introduced. The full-energy range secondary electron emission coefficient of DKDP electro-optic crystal was measured by three-shot continuous pulse method. The results show that the secondary electron emission coefficient of DKDP crystal is almost the same as that of common medium. The secondary electron emission coefficients of [ZnS] ~ 5 + [MgF_2] ~ 4 based on Ni-based and DKDP-based crystals are also given. The results show that the electron emission coefficients of the reflecting dielectric films are different for different substrates. The measurement of the secondary electron emission of the film [ZnS] ~5 + [MgF_2] ~4 on the same substrate shows that it is different from the secondary electron emission coefficient of ZnS and MgF_2.
