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为了更好地理解“黑硅”材料高吸收效率的物理原因,在成功制备了表面具有不同高度的锥状尖峰结构的“黑硅”材料基础上,利用扫描电子显微镜(SEM)获得锥状尖峰的几何参数,并根据该参数进行“黑硅”表面特殊结构建模,计算出“黑硅”材料有效吸收表面积相对于普通平面硅材料的有效吸收表面积增加了20多倍;同时根据表面建模和几何光学的方法在200~2000 nm的光谱范围内进行了反射率仿真,仿真结果与实验测试数据较为接近,从而在理论上验证了该特殊结构的强吸收性是由飞秒激光加工的硅材料有效吸收表面积增加和“黑硅”结构的陷光效应而引起的。
In order to better understand the physical reasons for the high absorption efficiency of “black silicon” materials, scanning electron microscopy (SEM) was used to fabricate “black silicon” materials with conical peak structures with different heights on the surface. Obtained the geometric parameters of conical spikes, and according to the parameters of “black silicon ” surface special structure modeling, calculated “black silicon ” material effective absorption surface area relative to the normal planar silicon material effective absorption surface area increased by 20 The reflectivity simulation was carried out in the spectral range of 200-2000 nm according to the method of surface modeling and geometrical optics. The simulation results are close to those of the experimental data, which proves the strong absorptivity of the special structure theoretically Is caused by the effective absorption of the surface area of the silicon material processed by femtosecond laser and the trapping effect of the “black silicon” structure.