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We report Pt deposition on a Si substrate by means of atomic layer deposition(ALD) using(methylcyclopentadienyl) trimethylplatinum(CH_3C_5H_4Pt(CH_3)_3) and O_2.Silicon substrates with both HF-last and oxidelast surface treatments are employed to investigate the influence of surface preparation on Pt-ALD.A significantly longer incubation time and less homogeneity are observed for Pt growth on the HF-last substrate compared to the oxide-last substrate.An interfacial oxide layer at the Pt-Si interface is found inevitable even with HF treatment of the Si substrate immediately prior to ALD processing.A plausible explanation to the observed difference of Pt-ALD is discussed.
We report Pt deposition on a Si substrate by means of atomic layer deposition (ALD) using (methylcyclopentadienyl) trimethylplatinum (CH_3C_5H_4Pt (CH_3) _3) and O_2.Silicon substrates with both HF-last and oxidelast surface treatments are employed to investigate the influence of surface preparation on Pt-ALD. A significantly longer incubation time and less homogeneity are observed for Pt growth on the HF-last substrate compared to the oxide-last substrate. An interfacial oxide layer at the Pt-Si interface is found inevitable even with HF treatment of the Si substrate immediately prior to ALD processing. A plausible explanation to the observed difference of Pt-ALD is discussed.