论文部分内容阅读
在前期对双掺杂多晶Si栅(DDPG)LDMOSFET的电场、阈值电压、电容等特性所作分析的基础上,仍然采用双掺杂多晶Si栅结构,以低掺杂漏/源MOS(LDDMOS)为基础,重点研究了DDPG-LDDMOSFET的截止频率特性。通过MEDICI软件,模拟了栅长、栅氧化层厚度、源漏区结深、衬底掺杂浓度以及温度等关键参数对器件截止频率的影响,并与相同条件下p型单掺杂多晶Si栅(p-SDPG)MOSFET的频率特性进行了比较。仿真结果发现,在栅长90 nm、栅氧厚度2 nm,栅极p,n掺杂浓度均为5×1019cm-3条件下,截止频率由78.74 GHz提高到106.92 GHz,幅度高达35.8%。此结构很好地改善了MOSFET的频率性能,得出的结论对于结构的设计制作和性能优化具有一定的指导作用,在射频领域有很好的应用前景。
Based on the analysis of the electric field, threshold voltage and capacitance of the DOPG LDMOSFETs in the early stage, the dual-doped poly-Si gate structure is still adopted and the low-doped drain / source MOS (LDDMOS ) Based on the DDPG-LDDMOSFET focus on the cut-off frequency characteristics. The effects of gate length, thickness of gate oxide, junction depth of source and drain regions, substrate doping concentration and temperature on the cut-off frequency of the devices were simulated by MEDICI software. Compared with p-type single-doped polycrystalline Si Gate (p-SDPG) MOSFET frequency characteristics were compared. The simulation results show that the cut-off frequency increases from 78.74 GHz to 106.92 GHz with an amplitude of 35.8% at a gate length of 90 nm, a gate oxide thickness of 2 nm and a gate doping concentration of 5 × 1019 cm-3. The structure improves the frequency performance of the MOSFET well, and the conclusion is helpful to the design and performance optimization of the structure. It has a good application prospect in the field of radio frequency.