论文部分内容阅读
利用等离子体增强MOCVD法生长出 ZnO薄膜，用X射线衍射谱观察到位于 2θ34．56°处（0002）的衍射峰，表明ZnO沿c方向呈柱状生长．通过荧光光谱，观察到来自于激子的高强度的近带边紫外光发射（375um）．紫外发射光强度与深能级复合发射光强度比高达 193，显示出材料的高质量，并通过原子力显微镜加以验证．为了实现高阻ZnO薄膜，利用高温富氧分段退火和用N2 气进行掺氮两种方法生长高阻ZnO薄膜．结果表明，电阻率由0．65 Ω·cm分别升高到1100 Ω·cm（分段退火）和5×104Ω·cm（掺氮）．进一步比较发现，掺氮的样品不仅电阻率高，而且光荧光特性好，显示出更高的薄膜质量．
ZnO thin films were grown by plasma-enhanced MOCVD. The diffraction peaks at 2θ 34.56 ° (0002) were observed by X-ray diffraction. By fluorescence spectroscopy, high intensity near-band ultraviolet light emission (375 um) from excitons was observed. UV emission intensity and deep level composite emission intensity ratio of up to 193, showing the high quality of the material, and verified by atomic force microscopy. In order to realize the high resistance ZnO thin film, high-resistance ZnO thin film is grown by high-temperature oxygen-rich segmented annealing and nitrogen gas nitrogen doping. The results showed that the resistivity increased from 0.65 Ω · cm to 1100 Ω · cm (segmented annealing) and 5 × 10 4 Ω · cm (nitrogen doped) respectively. Further comparison found that nitrogen-doped samples not only have high resistivity, but also have good fluorescence properties, indicating higher film quality.