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采用RF磁控溅射技术在石英衬底上生长了厚度可调的锐钛矿相TiO_2薄膜,继而采用光刻技术在薄膜上生长了Ag叉指电极,获得了MSM结构TiO_2基紫外探测器。I-V特性测试结果表明,Ag与TiO_2之间表现出优良的欧姆接触特性,所制备探测器为欧姆接触。此外,TiO_2薄膜厚度对探测器的光电性能影响显著,当薄膜厚度达到197 nm时,光电性能达到最高。此时,光电流高出暗电流近2.5个数量级,紫外光区的响应度高出可见光区近2个数量级。所制备Ag/TiO_2MSM紫外探测器表现出明显的光敏性和可见盲特性。
The thickness of tunable anatase TiO2 film was grown on quartz substrate by RF magnetron sputtering. Then the Ag interdigital electrode was grown on the film by photolithography, and the MSM Ti02-based UV detector was obtained. I-V characteristic test results show that, Ag and TiO 2 showed excellent ohmic contact characteristics, the detector prepared for the ohmic contact. In addition, the thickness of TiO_2 has a significant influence on the photoelectric properties of the detector. When the thickness of the TiO_2 film reaches 197 nm, the photoelectric properties reach the highest. At this point, the photocurrent is nearly 2.5 orders of magnitude higher than that of the dark current, and the responsivity of the UV region is almost 2 orders of magnitude higher than that of the visible region. The prepared Ag / TiO 2 MSM UV detector showed obvious photosensitivity and visible blindness.