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全球领先的半导体解决方案供应商瑞萨电子株式会社宣布开发出了肖特基势垒二极管(SBD)RJS6005TDPP,该器件采用了碳化硅材料——这种材料被认为具有用于功率半导体器件的巨大潜力。这款新型SiC肖特基势垒二极管适用于空调、通信基站和太阳能阵列等大功率电子系统。该器件还采用了日立株
Renesas Electronics Corp., a leading global supplier of semiconductor solutions, today announced the development of the Schottky Barrier Diode (SBD) RJS6005TDPP, a silicon carbide-based material that is believed to have a significant performance for power semiconductor devices potential. The new SiC Schottky barrier diode is suitable for high-power electronic systems such as air conditioners, communications base stations and solar arrays. The device also uses Hitachi strain