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一种高速ＣＭＯＳ比较器，采用二级正反馈结构和一级推挽输出结构，通过优化传输速度和增益，在３μｍ工艺中，模拟表明它的最小分辨率±ＬＳＢ为±４．９ｍＶ，输入动态范围为±２．５Ｖ（±２．５Ｖ电源电压），相应于９位比较精度，而工作频率达３０ＭＨｚ．用单层金属、双层多晶硅ＣＭＯＳ工艺实现，版图面积为２９５μｍ×２６６μｍ，功耗９．７２ｍＷ．
A high-speed CMOS comparator with a two-stage forward feedback structure and a first-order push-pull output structure, the simulation shows that its minimum resolution ± LSB is ± 4.9mV by optimizing the transmission speed and gain, and the input dynamic The range is ± 2.5V (± 2.5V supply voltage), corresponding to 9-bit resolution and operating frequency up to 30MHz. With single-layer metal, double-layer polysilicon CMOS technology, layout area of 295μm × 266μm, power consumption 9.72mW.