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In the present study,anodic films on aluminium alloy was used as the dielectric layer for Cu thinfilm temperature sensor,and then Cu film was deposited by unbalanced magnetron sputtering ion plating as the sensitive layer. Microstructure and surface morphologies of Cu film were investigated by optical microscope ( OM),atomic force microscope (AFM) and scanning electron microscope (SEM).Electrical properties of Cu thin-film temperature sensor were tested by four-point probe technique and Digit Multimeter.The results showed that the surface roughness of anodic films can be reduced from Ra 58.096 nm to Ra 16.335 nm by proper polishing.Continual Cu stripes can be obtained both on polished anodic alumina film and smooth alumina wafer by etching after Cu film annealing.The resistivity of Cu films before and after 300 ℃ as well as 400 ℃ annealing are 12.48 mΩ · cm,5.48 mΩ · cm and 4.83 mΩ · cm,respectively.The resistances of Cu thin-film temperature sensor in 70 ℃ and 0 ℃ are 946.5 Ω and 76l.15 Ω respectively.The temperature coefficient of resistivity (TCR) of the sensor is 3479 × 10-6/℃.