一、引言近几年来,具有p-n结的半导体晶体,在带电粒子的探测方面,巳经得到越来越广泛的应用。与气体电离室和闪烁探测器比较,半导体探测器有如下优点:(1)如硅,产生一对电子与空穴只需要能量3.5电子伏,而在充氩气的电离室中,则需28电子伏。这意味着,半导体探 I. INTRODUCTION In recent years, semiconductor crystals with p-n junctions have gained more and more widespread use in the detection of charged particles. Compared with the gas ionization chamber and the scintillation detector, the semiconductor detector has the following advantages: (1) such as silicon, to generate a pair of electrons and holes only need energy 3.5 electron volts, while in the argon ionization chamber, you need 28 Electronic volts. This means that semiconductor exploration