Design of 10 GHz eight-phase voltage controlled oscillator in 90 nm CMOS

来源 :The Journal of China Universities of Posts and Telecommunica | 被引量 : 0次 | 上传用户:brxdq
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A novel 10 GHz eight-phase voltage-controlled oscillator(VCO) architecture applied in clock and data recovery(CDR) circuit for 40 Gbit/s optical communications system is proposed.Compared with the traditional eight-phase oscillator,a new ring CL ladder filter structure with four inductors is proposed.The VCO is designed and fabricated in IBM 90nm complementary metal-oxide-semiconductor transistor(CMOS) technology.Measurement results show the tuning range is 9.2 GHz~11.0 GHz and the phase noise of-108.85 dBc/Hz at 1 MHz offset from the carrier frequency of 10 GHz.The chip area of VCO is 500 μm× 685 μm and the power dissipation is 17.4 mW with the 1.2 V supply voltage. A novel 10 GHz eight-phase voltage-controlled oscillator (VCO) architecture applied in clock and data recovery (CDR) circuit for 40 Gbit / s optical communications system is proposed. Compared with the traditional eight-phase oscillator, a new ring CL ladder filter structure with four inductors is proposed. The VCO is designed and fabricated in IBM 90 nm complementary metal-oxide-semiconductor transistor (CMOS) technology. Measurement results show the tuning range is 9.2 GHz ~ 11.0 GHz and the phase noise of-108.85 dBc / Hz at 1 MHz offset from the carrier frequency of 10 GHz. The chip area of ​​VCO is 500 μm × 685 μm and the power dissipation is 17.4 mW with the 1.2 V supply voltage.
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