论文部分内容阅读
重点研究了InGaAs/InP SPAD的隧道贯穿电场、雪崩击穿电场、雪崩宽度与过偏电压的关系,提出了过偏电压的计算方法。分析了InGaAs/InP SPAD的基本特性即探测效率、暗计数率与其过偏电压、工作温度、量子效率、电场分布的依赖关系,提出了一种单光子InGaAs雪崩二极管的设计方法。设计制作了InGaAs/InP SPAD,并在门控淬灭模式下进行了单光子探测实验。结果表明:对于准200μm的SPAD,在过偏2 V、温度-40℃条件下,探测效率(PDE)>20%(1 550 nm)、暗计数率(DCR)准20 k Hz;对于准50μm的SPAD,在过偏2.5 V、温度-40℃条件下,探测效率(PDE)>23%(1 550 nm)、暗计数率(DCR)2 k Hz。最后对实验结果进行了分析和讨论。
The relationship between the tunneling electric field, the avalanche breakdown electric field, the avalanche width and the over-bias voltage of InGaAs / InP SPAD has been studied. The calculation method of the over-bias voltage has been put forward. Based on the analysis of the basic characteristics of InGaAs / InP SPAD, such as the detection efficiency, dark count rate and its dependence on the bias voltage, operating temperature, quantum efficiency and electric field distribution, a single photon InGaAs avalanche diode design method is proposed. InGaAs / InP SPAD was designed and fabricated, and the single photon detection experiment was carried out in the gated quenching mode. The results show that the detection efficiency (PDE)> 20% (1 550 nm) and the dark count rate (DCR) are 20 k Hz for a standard 200 μm SPAD at a bias of 2 V and a temperature of -40 ° C. (PDE)> 23% (1 550 nm) and dark count rate (DCR) 2 k Hz at a bias of 2.5 V at -40 ° C. Finally, the experimental results were analyzed and discussed.