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本文对直流磁控反应溅射制备 ZAO薄膜的工艺作了具体分析 ,探讨了沉积温度、氧分压、Al含量和靶基距等对 ZAO薄膜的电阻率、可见光区透射率的影响。
In this paper, the process of DC magnetron reactive sputtering sputtering ZAO thin film was analyzed in detail, and the effects of deposition temperature, oxygen partial pressure, Al content and target pitch on the resistivity and visible light transmittance of ZAO thin films were discussed.