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R.H.Kingston和B.Lax对二极管的开关性能曾做出了详细的研究。根据这一理论,减小反向恢复时间的主要途径是减小材料少数载流子的寿命。我们采用n型锗用扩散法掺金
R.H. Kingston and B.Lax have done a detailed study of the diode switching performance. According to this theory, the main way to reduce the reverse recovery time is to reduce the lifetime of material minority carriers. We use n-type germanium diffusion method with gold