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引言发展了一种应用于毫米波的直接在镀铜散热块上制造的小面积 GaAs 雪崩二极管的制作方法。按照这种方法已经得到了在 Ka 波段(26.5～40千兆赫)连续工作的外延生长的 p-n结二极管及在 V 波段(50～75千兆赫)连续工作的 Gr-GaAs 肖特基势垒二极管。在 Ka 波段至今最好的性能是在31千兆赫下输出190毫瓦,效率10%。V 波段的初步连续试验,在53.75千兆赫下,已得到86毫瓦的功率,效率3%。二极管的制造
Introduction A method of fabricating a small area GaAs avalanche diode fabricated directly on a copper-plated heat sink block for millimeter-wave applications has been developed. According to this method, an epitaxial p-n junction diode operating continuously in the Ka band (26.5~40 GHz) and a Gr-GaAs Schottky barrier diode operating continuously in the V band (50~75 GHz) have been obtained. The best performance so far in the Ka band is 190 milliwatts at 31 GHz with an efficiency of 10%. The initial continuous V-band test, at 53.75 GHz, resulted in 86 milliwatts of power at 3% efficiency. Diode manufacturing