用微波等离子体化学气相沉积法 (MPCVD)在硅和铂衬底上得到高质量的C3 N4薄膜 .计算了α C3 N4和β C3 N4单相X射线谱的峰位和强度 ,沉积膜的X射线谱具有两相的所有强峰 ,证明它是α 和β C3 N4的混合物 .总的N/C比在 1 0～ 2 0之间 .FT IR和Raman谱支持C—N共价键的存在 .体积弹性模量达到 34 9GPa .对薄膜特性的鉴定提出了一些看法 High-quality C3 N4 thin films were obtained on silicon and platinum substrates by microwave plasma chemical vapor deposition (MPCVD). The peak positions and intensities of α C3 N4 and β C3 N4 single-phase X-ray spectra were calculated, and the X The ray spectrum has all the strong peaks in both phases, proving that it is a mixture of α and β C3 N4 with a total N / C ratio between 10 and 20. The FT IR and Raman spectra support the existence of C-N covalent bonds The bulk modulus reached 34 9 GPa. Some opinions on the characterization of thin films were put forward