文章提出了一种基于子电路的IGBT模型,并对IGBT的温度特性进行模拟。用电压控制的可变电阻等效IGBT的宽基区调制电阻取得了很好的效果。用SPICE的LEVEL_8模型,确保模拟的精确性和收敛性。模拟结果表明,无论PT型还是NPT型IGBT,其温度系数均可正可负,纠正了一种普遍的观点称为PT型IGBT,其温度系数可正可负而NPT型IGBT,其温度系数只为正。模拟结果与实验对比符合较好。 This paper presents a IGBT model based on sub-circuit and simulates the temperature characteristics of IGBT. Voltage-controlled variable-resistance IGBT wide base area modulation resistor achieved good results. Use SPICE’s LEVEL_8 model to ensure simulation accuracy and convergence. The simulation results show that both PT and NPT type IGBTs have positive and negative temperature coefficients and correct a common view called PT type IGBT whose temperature coefficient is positive and negative and NPT type IGBT whose temperature coefficient is only Positive. The simulation results are in good agreement with the experimental ones.