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本文建立了半导体微腔的缀饰激子模型。在 VCSEL 器件量子阱中的激子首先通过内电磁场与腔耦合 ,形成缀饰态。而后作为多粒子过程 ,缀饰激子与腔内真空场耦合产生辐射。通过 QED方法 ,我们得到偶极子辐射密度方程和系统能量衰变方程。从方程解的讨论中 ,我们得到超辐射和偶极子微腔方向效应的结果 ,同时预言了当内场耦合足够强时 ,缀饰激子可以直接辐射到一个很窄的激光模中。
In this paper, a decorate exciton model of semiconductor microcavity has been established. Excitons in a VCSEL device quantum well are first coupled to the cavity by an internal electromagnetic field to form a doping state. Then as a multi-particle process, the decorate exciton couples with the intracavity vacuum field to produce radiation. By the QED method, we obtain the dipole radiation density equation and the system energy decay equation. From the discussion of the solution of the equations, we obtain the results of the directional effects of the supercavity and dipole microcavities. We also predict that when the internal field coupling is strong enough, the exciton excitons can be directly radiated into a very narrow laser mode.