论文部分内容阅读
The off-state leakage current characteristics of nanoscale channel metal-oxide-semiconductor field-effect transistors with a high-k gate dielectric are thoroughly investigated.The off-state leakage current can be divided into three components:the gate leakage current,the source leakage current,and the substrate leakage current.The influences of the fringing-induced barrier lowering effect and the drain-induced barrier lowering effect on each component are investigated separately.For nanoscale devices with high-k gates,the source leakage current becomes the major component of the off-state leakage current.