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应用高分辨X射线衍射技术研究了MOCVD在宝石衬底上生长的InGaN/GaN多量子阱结构。测量(105)非对称面的倒易空间图获得量子阱结构的应变状态。由(002)面三轴衍射0级卫星峰峰位结合应变状况计算获得InGaN层中In含量,从(002)面的ω/2θ衍射谱以及小角反射谱获得多量子阱的一个周期的厚度,GaN层和InGaN层的厚度比。最后通过X射线动力学拟合的方法从(002)面的ω/2θ三轴衍射谱获得In的精确含量是25.5%,InGaN势阱层的精确厚度是1.67nm,GaN阻挡层的精确厚度是22.80nm。
The high-resolution X-ray diffraction technique was used to study the InGaN / GaN multiple quantum well structure grown by MOCVD on a sapphire substrate. The (105) reciprocal space diagram of the asymmetric plane is measured to obtain the strain state of the quantum well structure. The In content in the InGaN layer was calculated by combining the strain state of the 0 level satellites in the (002) plane and the thickness of one cycle of the MQW from the ω / 2θ diffraction spectrum of the (002) plane and the small angle reflection spectrum. Thickness ratio of GaN layer and InGaN layer. Finally, the accurate content of In obtained from the (002) plane ω / 2θ triaxial diffraction spectrum by X-ray dynamic fitting method is 25.5%, the exact thickness of the InGaN well layer is 1.67 nm, and the exact thickness of the GaN barrier layer is 22.80 nm.